KRi ®gÀWÂ÷¤l·½ RFICP «Y¦C
¤W®ü§BªF¬ü°ê KRi ®gÀWÂ÷¤l·½ RFICP «Y¦C, µL»Ý¿Oµ·´£¨Ñ°ª¯à¶q, §C¿@«×ªºÂ÷¤l§ô, ³q¹L¬]·¥±±¨îÂ÷¤l§ôªº¯à¶q©M¤è¦V, ³æ¦¸¤uÃÀ®É¶¡§óªø! ®gÀW·½ RFICP «Y¦C´£¨Ñ§¹¾ãªº«Y¦C, ¥]§tÂ÷¤l·½¥»Åé, ¹q¤l¨ÑÀ³¾¹, ¤¤©M¾¹, ¦Û°Ê±±¨î¾¹µ¥. ®gÀWÂ÷¤l·½¾A¦X¦h¼h½¤ªº¨î³Æ, Â÷¤lÂqÁáÁὤ©MÂ÷¤l»k¨è, §ïµ½¹v§÷ªºP±K©Ê, ¥ú³z®g, §¡¤Ã©Ê, ªþµÛ¤Oµ¥.
®gÀWÂ÷¤l·½ RFICP «Y¦C§Þ³N°Ñ¼Æ:
«¬¸¹ | RFICP 40 | RFICP 100 | RFICP 140 | RFICP 220 | RFICP 380 |
Discharge ¶§·¥ | RF ®gÀW | RF ®gÀW | RF ®gÀW | RF ®gÀW | RF ®gÀW |
Â÷¤l§ô¬y | >100 mA | >350 mA | >600 mA | >800 mA | >1500 mA |
Â÷¤l°Ê¯à | 100-1200 V | 100-1200 V | 100-1200 V | 100-1200 V | 100-1200 V |
¬]·¥ª½®| | 4 cm £X | 10 cm £X | 14 cm £X | 20 cm £X | 30 cm £X |
Â÷¤l§ô | »EµJ, ¥¦æ, ´²®g | ||||
¬y¶q | 3-10 sccm | 5-30 sccm | 5-30 sccm | 10-40 sccm | 15-50 sccm |
³q®ð | Ar, Kr, Xe, O2, N2, H2, ¨ä¥L | ||||
¨å«¬À£¤O | < 0.5m Torr | < 0.5m Torr | < 0.5m Torr | < 0.5m Torr | < 0.5m Torr |
ªø«× | 12.7 cm | 23.5 cm | 24.6 cm | 30 cm | 39 cm |
ª½®| | 13.5 cm | 19.1 cm | 24.6 cm | 41 cm | 59 cm |
¤¤©M¾¹ | LFN 2000 | ||||
®gÀWÂ÷¤l·½ RFICP «Y¦CÀ³¥Î:
Â÷¤l»²§UÁὤ IBAD ( Ion beam assisted deposition in thermal & e-beam evaporation )
Â÷¤l²M¬~ PC (In-situ preclean in sputtering & evaporation )
ªí±§ï©Ê, ¿E¬¡ SM (Surface modification and activation )
Â÷¤l»k¨è IBE (Ion beam etching of surface features in any material)
Â÷¤lÂqÁá IBSD (Ion beam sputter deposition of single and multilayer structures)
¤W®ü§BªF¬ü°ê¦Ò¤Ò°Ò KRi ¤j¤f®|®gÀWÂ÷¤l·½ RFICP 220, RFICP 380 ¦¨¥\À³¥Î©ó 12^¤o©M 8^¤oÂ÷¤l§ô¨è»k¾÷, §@¬°»k¨è¾÷ªº®Ö¤ß³¡¥ó, KRI ®gÀWÂ÷¤l·½´£¨Ñ¤j¤Ø¤o, °ª¯à¶q, §C¿@«×ªºÂ÷¤l§ô, ±µ¨ü«È¤á©w¨î, ³æ¦¸¤uÃÀ®É¶¡§óªø, º¡¨¬§÷®Æ¨è»k»Ý¨D!
1978 ¦~ Dr. Kaufman ³Õ¤h¦b¬ü°ê³Ð¥ß Kaufman & Robinson, Inc ¤½¥q, ¬ãµo¥Í²£¦Ò¤Ò°ÒÂ÷¤l·½, ÀNº¸Â÷¤l·½©M®gÀWÂ÷¤l·½. ¬ü°ê¦Ò¤Ò°ÒÂ÷¤l·½¾ú¸g 40 ¦~§ï¨}¤Îµo®i¤w¨ú±o¦h¶µ±M§Q. Â÷¤l·½¼sªx¥Î©óÂ÷¤l²M¬~ PC, Â÷¤l»k¨è IBE, »²§UÁὤ IBAD, Â÷¤lÂq®gÁὤ IBSD »â°ì, ¤W®ü§BªF¬O¬ü°ê¦Ò¤Ò°ÒÂ÷¤l·½¤¤°êÁ`¥N²z.
Y±z»Ýn¶i¤@¨Bªº¤F¸Ñ¸Ô²Ó«H®§©Î°Q½×, ½Ð°Ñ¦Ò¥H¤UÁpµ¸¤è¦¡:
¤W®ü§BªF: ù¥ý¥Í
¿Ý¤½ºô¦w³Æ41010502000017¸¹ 
