KRI ÀNº¸Â÷¤l·½ eH 2000
¤W®ü§BªF¥N²z¬ü°êì¸Ë¶i¤f KRI ÀNº¸Â÷¤l·½ eH 2000 ¬O¤@´Ú§ó±j¤jªºª©¥», ±a¦³¤ô§N¤è¦¡, ¥L¨ã³Æ eH 1000 ©Ò¦³ªº©Ê¯à, §C¦¨¥»³]p´£¨Ñ°ªÂ÷¤l¹q¬y, ¯S§O¾A¦X¤j¤¤«¬¯uªÅ«Y²Î. ³q±`À³¥Î©óÂ÷¤l»²§UÁὤ, ¹w²M¬~©M§C¯à¶qÂ÷¤l»k¨è.
¤Ø¤o: ª½®|= 5.7¡§ °ª= 5.5¡¨
©ñ¹q¹qÀ£ / ¹q¬y: 50-300V / 10A ©Î 15A
¾Þ§@®ðÅé: Ar, Xe, Kr, O2, N2, ¦³¾÷«eÅé
KRI ÀNº¸Â÷¤l·½ eH 2000 ¯S©Ê
? ¤ô§N - »P eh 1000 ¹ï¤ñ, ´£¨Ñ§ó°ªªºÂ÷¤l¿é¥X¹q¬y
? ¥i©î¨ø¶§·¥²Õ¥ó - ©ö©óºûÅ@; ºûÅ@®É, ¤j«×¦a´î¤Ö°±¾÷®É¶¡; §Y´¡§Y¥Î³Æ¥Î¶§·¥
? ¼eªi§ô°ª©ñ¹q¹q¬y - °ª¹q¬y±K«×; §¡¤Ãªº»k¨è²v; ¨è»k®Ä²v°ª; °ªÂ÷¤l»²§UÁὤ IAD ®Ä²v
? ¦h¥Î³~ - ¾A¥Î©ó Load lock / ¯uªÅ«Y²Î; ¦w¸Ë¤è«K
? µ¥Â÷¤lÂà´«©Méwªº¥\²v±±¨î
KRI ÀNº¸Â÷¤l·½ eH 2000 §Þ³N°Ñ¼Æ
«¬¸¹ | eH 2000 / eH 2000L / eH 2000x02/ eH 2000 LEHO |
¨Ñ¹q | DC magnetic confinement |
- ¹qÀ£ | 40-300V VDC |
- Â÷¤l·½ª½®| | ~ 5 cm |
- ¶§·¥µ²ºc | ¼Ò¶ô¤Æ |
¹q·½±±¨î | eHx-30010A |
°t¸m | - |
- ³±·¥¤¤©M¾¹ | Filament, Sidewinder Filament or Hollow Cathode |
- Â÷¤l§ôµo´²¨¤«× | > 45¢X (hwhm) |
- ¶§·¥ | ¼Ð·Ç©Î Grooved |
- ¤ô§N | «eªO¤ô§N |
- ©³®y | ²¾°Ê©Î§Ö±µªkÄõ |
- °ª«× | 4.0' |
- ª½®| | 5.7' |
- ¥[¤u§÷®Æ | ª÷ÄÝ |
- ¤uÃÀ®ðÅé | Ar, Xe, Kr, O2, N2, Organic Precursors |
- ¦w¸Ë¶ZÂ÷ | 16-45¡¨ |
- ¦Û°Ê±±¨î | ±±¨î4ºØ®ðÅé |
* ¥i¿ï: ¥i½Õ¨¤«×ªº¤ä¬[; Sidewinder
KRI ÀNº¸Â÷¤l·½ eH2000 À³¥Î»â°ì
? Â÷¤l»²§UÁὤ IAD
? ¹w²M¬~ Load lock preclean
? ¹w²M¬~ In-situ preclean
? Direct Deposition
? Surface Modification
? Low-energy etching
? III-V Semiconductors
? Polymer Substrates
1978 ¦~ Dr. Kaufman ³Õ¤h¦b¬ü°ê³Ð¥ß Kaufman & Robinson, Inc ¤½¥q, ¬ãµo¥Í²£¦Ò¤Ò°ÒÂ÷¤l·½, ÀNº¸Â÷¤l·½©M®gÀWÂ÷¤l·½. ¬ü°ê¦Ò¤Ò°ÒÂ÷¤l·½¾ú¸g 40 ¦~§ï¨}¤Îµo®i¤w¨ú±o¦h¶µ±M§Q. Â÷¤l·½¼sªx¥Î©óÂ÷¤l²M¬~ PC, Â÷¤l»k¨è IBE, »²§UÁὤ IBAD, Â÷¤lÂq®gÁὤ IBSD »â°ì, ¤W®ü§BªF¬O¬ü°ê¦Ò¤Ò°ÒÂ÷¤l·½¤¤°êÁ`¥N²z.
Y±z»Ýn¶i¤@¨Bªº¤F¸Ñ KRi ÀNº¸Â÷¤l·½, ½Ð°Ñ¦Ò¥H¤UÁpµ¸¤è¦¡
¤W®ü§BªF: ù¤p©j »OÆW§BªF: ¤ý¤p©j
T: +86-21-5046-3511 ext 108 T: +886-3-567-9508 ext 161
F: +86-21-5046-1322 F: +886-3-567-0049
M: +86 152-0195-1076( ·L«H¦P¸¹ ) M: +886-975-571-910
www.hakuto-china.cn www.hakuto-vacuum.com.tw
¤W®ü§BªFª©Åv©Ò¦³, ½«þ¥²¨s¡I